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Assistant Scientist – Atomic Layer Deposition at Argonne National Laboratory
Lemont, United States


Job Descrption

The Applied Materials Division at Argonne National Laboratory is seeking a staff Assistant Scientist in the Functional Coatings Group. The successful applicant will join a diverse and energetic team of staff scientists, postdocs, and students dedicated to advancing the science, technology, and application of atomic layer deposition (ALD) and related techniques. In this position, you will maintain the laboratory and perform ground-breaking research in areas including energy storage, microelectronics, water treatment, and solid-state detectors. You will serve as the technical lead in our ongoing research programs. In addition, you will create, develop, and sustain research programs and attract funding in new application areas for ALD and related technologies.

Position Requirements

  • Extensive experience in ALD and related technologies including atomic layer etching and sequential infiltration synthesis.

  • Extensive experience operating and maintaining ALD equipment including in-situ measurements (QCM, QMS, FTIR, ellipsometry, etc.)

  • Extensive experience in thin film characterization such as ellipsometry, XRD, XPS, RBS, XRR, AFM, Raman, and UV-Vis.

  • Experience working in a collaborative, cross-disciplinary environment.

  • Ability to work with other groups and divisions within Argonne and with external partners such as other national labs, universities, and industry.

  • Ability to model Argonne's Core Values: Impact, Respect, Safety, Integrity, and Teamwork.

The selected candidate will be placed at the appropriate level (RD2 or RD3) depending upon depth and breadth of relevant knowledge, skills, and experience brought to the position.  The requirements for the desired levels are as follows:

RD2 Level: Bachelor’s and 5+ years; Master’s and 3+ years; Doctorate and 2-4 years.

RD3 Level: Bachelor’s and 8+ years; Master’s and 5+ years; or Doctorate and 4+ years.

Preferred Qualifications:

  • Experience designing and building ALD equipment including CAD and LabVIEW.

  • Experience in synchrotron X-ray measurements.

  • Experience in energy storage, microelectronics, water treatment, and microchannel plates.

Job Family

Research Development (RD)

Job Profile

Chemistry 2

Worker Type

Regular

Time Type

Full time

As an equal employment opportunity and affirmative action employer, and in accordance with our core values of impact, safety, respect, integrity and teamwork, Argonne National Laboratory is committed to a diverse and inclusive workplace that fosters collaborative scientific discovery and innovation. In support of this commitment, Argonne encourages minorities, women, veterans and individuals with disabilities to apply for employment. Argonne considers all qualified applicants for employment without regard to age, ancestry, citizenship status, color, disability, gender, gender identity, gender expression, genetic information, marital status, national origin, pregnancy, race, religion, sexual orientation, veteran status or any other characteristic protected by law.

Argonne employees, and certain guest researchers and contractors, are subject to particular restrictions related to participation in Foreign Government Sponsored or Affiliated Activities, as defined and detailed in United States Department of Energy Order 486.1A. You will be asked to disclose any such participation in the application phase for review by Argonne's Legal Department.  

All Argonne offers of employment are contingent upon a background check that includes an assessment of criminal conviction history conducted on an individualized and case-by-case basis.  Please be advised that Argonne positions require upon hire (or may require in the future) for the individual be to obtain a government access authorization that involves additional background check requirements.  Failure to obtain or maintain such government access authorization could result in the withdrawal of a job offer or future termination of employment.


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